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IRFB11N50APBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 11A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFB11N50APBF
- Description：MOSFET N-CH 500V 11A TO220AB
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：520mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1423 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：170W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRFB11N50APBF
Single FETs, MOSFETs Overview
The IRFB11N50APBF is an N-channel Power MOSFET manufactured by Infineon Technologies, utilizing TrenchFET technology. It features a maximum drain-source voltage of 500 V and a continuous drain current of 11 A at 25 °C. The device has a maximum on-state resistance of 0.8 Ω at a gate-source voltage of 10 V. It is housed in a TO-220 package with a total power dissipation rating of 125 W.
Single FETs, MOSFETs Feature Summary
- Incorporates TrenchFET technology for optimized performance characteristics.
- Features a ruggedized design capable of withstanding high energy pulses in the avalanche mode.
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- DC-to-DC converters
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the component authenticity through official Infineon channels or authorized distributors. Confirm that the part number suffix matches the required RoHS compliance specifications. Ensure the TO-220 package dimensions align with the target PCB footprint requirements before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 500 V blocking capability is required alongside moderate current handling. The 0.8 Ω on-resistance makes it suitable for applications where conduction losses are a primary consideration. Evaluate thermal management solutions to ensure junction temperatures remain within safe operating limits during continuous operation.
Single FETs, MOSFETs Part Context
This discrete semiconductor belongs to the broader family of power MOSFETs designed for efficient electronic switching. It serves as a fundamental building block in power electronics, replacing older bipolar transistor technologies to achieve higher efficiency and faster switching speeds in various industrial and consumer electronic systems.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package compatibility to preserve circuit integrity and safety margins.
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