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IRFB3507 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 97A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFB3507
- Description：MOSFET N-CH 75V 97A TO220AB
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id：4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3540 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：190W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRFB3507
Single FETs, MOSFETs Overview
The IRFB3507 is a single N-channel power MOSFET manufactured by Infineon Technologies, housed in a TO-220AB through-hole package. It features a drain-source voltage (VDS) rating of 75 V and a continuous drain current (ID) of 97 A at case temperature. The device delivers a maximum on-state resistance (RDS(on)) of 7.8 mΩ at a gate-source voltage of 10 V. Thermal performance includes a junction-to-case thermal resistance (RthJC) of 0.45 K/W and a maximum operating junction temperature of 175 °C. Total power dissipation is rated at 190 W under case conditions.
Single FETs, MOSFETs Feature Summary
- N-channel HEXFET technology for efficient switching
- Low on-state resistance to minimize conduction losses
- Robust avalanche energy capability
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer marking and date code against official Infineon documentation to ensure authenticity. Confirm that the component meets RoHS compliance requirements if applicable to your design specifications. Check for any specific handling instructions regarding electrostatic discharge during installation.
Single FETs, MOSFETs Selection Notes
Select this component when a 75 V N-channel MOSFET with moderate current handling is required in a through-hole configuration. Ensure the application's thermal management can support the specified RthJC and power dissipation limits. Verify that the gate drive voltage aligns with the typical threshold characteristics for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for general-purpose power switching applications requiring reliable performance in standard through-hole packages. The device represents a balance between low on-resistance and manageable gate charge for efficient operation.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitutes. Ensure any alternative maintains compatible pinout, voltage ratings, and thermal characteristics.
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