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Product Detailed Parameters
- Description：TRENCH >=100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IRFB4127PBFXKMA1 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 200 V and a continuous drain current of 76 A at 25°C. The device exhibits a maximum on-resistance of 20 mΩ at a gate-source voltage of 10 V, with a typical total gate charge of 100 nC. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-220AB through-hole package.
Feature Summary
- Enhanced body diode dV/dt and dI/dt capability for improved switching performance
- Improved gate, avalanche, and dynamic dv/dt ruggedness
- Fully characterized capacitance values and avalanche safe operating area (SOA)
Applications
- High efficiency synchronous rectification in switch-mode power supplies (SMPS)
- Uninterruptible power supply (UPS) systems
- High-speed power switching applications
Procurement Notes
Verify the specific suffix XKMA1 against official Infineon documentation to confirm RoHS compliance status and manufacturing origin details. Ensure the ordering part number matches the required tape-and-reel packaging format rather than standard tube packaging when sourcing components for automated assembly processes.
Selection Notes
Select this component for designs requiring robust avalanche performance and high current handling in a through-hole configuration. Evaluate thermal management requirements based on the 0.4 K/W junction-to-case thermal resistance. Confirm that the gate drive circuit can support the specified threshold voltage range of 3 V to 5 V for reliable turn-on characteristics.
Part Context
This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The product line is engineered for high-efficiency power conversion applications. The PBFXKMA1 designation indicates a specific packaging and compliance variant within the broader IRFB4127 series, maintaining consistent electrical parameters across the family.
Replacement Considerations
Direct substitutes include IRFB4127PBF and IRFP4127PBF, which share identical electrical specifications but differ in packaging type. Verify pinout compatibility and thermal interface requirements before substitution. Cross-compatibility with other manufacturers' parts requires detailed parameter matching beyond basic voltage and current ratings.
