IRFBC40S

Single FETs, MOSFETs Overview

The IRFBC40S is a Vishay Siliconix N-channel enhancement mode Power MOSFET designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 6.2A at 25°C. The device utilizes a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management through direct mounting to a heatsink via the exposed drain tab. Key electrical characteristics include a maximum on-resistance of 1.2 ohms at Vgs=10V and a gate threshold voltage range of 2V to 4V. The component is rated for operation within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600V drain-source breakdown rating
• Surface-mount construction in a thermally optimized TO-263 package
• Enhanced dynamic dv/dt rating for robust switching performance
• Repetitive avalanche rated for improved ruggedness

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Motor control systems requiring medium-power switching
• General-purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'S' against official Vishay documentation to confirm it denotes the standard tape-and-reel packaging format rather than a variant with altered electrical parameters. Ensure that the selected component matches the required RoHS compliance status and lead-free specifications mandated by the target assembly process. Cross-reference the manufacturer part number with the most recent datasheet revision to validate pinout compatibility and thermal resistance values before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is preferred over through-hole packages like the IRFBC40PBF while maintaining identical electrical ratings. The TO-263 package offers a balance between thermal dissipation capacity and PCB space efficiency. Designers should evaluate the 1.2 ohm on-resistance against the expected load current to ensure acceptable conduction losses. Verify that the driving circuitry can provide sufficient gate voltage to fully enhance the channel given the specified threshold voltage range.

Single FETs, MOSFETs Part Context

This device belongs to the IRFBC series of third-generation Power MOSFETs from Vishay Siliconix. These transistors are engineered to provide an optimal combination of fast switching speeds, low on-resistance, and cost-effectiveness. The series is widely utilized in industrial and consumer electronics where reliable high-voltage switching is required. The silicon technology ensures stable performance across the specified operating temperature range.

Single FETs, MOSFETs Replacement Considerations

The IRFBC40PBF serves as a direct functional substitute with identical electrical specifications but utilizes a TO-220AB through-hole package instead of the surface-mount TO-263 form factor.