IRFBG20PBF

$1.53

Description：MOSFET N-CH 1000V 1.4A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:bde5ce79b039 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFBG20PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 1000V 1.4A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFBG20PBF

Description：MOSFET N-CH 1000V 1.4A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：54W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFBG20PBF

IRFBG20PBF

Single FETs, MOSFETs Overview

The IRFBG20PBF is a Vishay Siliconix N-Channel Power MOSFET in a TO-220AB package. It features a 1000 V drain-source voltage and an on-resistance of 11 Ω at VGS = 10 V. The device supports a continuous drain current of 1.4 A at 25 °C case temperature, with a maximum power dissipation of 54 W. Key dynamic parameters include a total gate charge of 38 nC, turn-on delay time of 9.4 ns, and rise time of 17 ns. It is rated for repetitive avalanche energy up to 5.4 mJ.

Single FETs, MOSFETs Feature Summary

Repetitive avalanche rated for ruggedized operation
Fast switching characteristics with low internal inductance
High peak diode recovery dV/dt rating
Designed for ease of paralleling

Single FETs, MOSFETs Applications

High-voltage power conversion circuits
Inductive load switching applications
General-purpose high-voltage power electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., PbF or BE3) against the required lead composition and halogen-free status. Confirm that the TO-220AB package dimensions match the target PCB footprint. Ensure thermal management design accounts for the specified junction-to-case thermal resistance ratings under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high blocking voltage capability combined with moderate current handling. The 11 Ω on-resistance suits lower current high-voltage scenarios where conduction losses are manageable. Evaluate the repetitive avalanche energy rating if the circuit involves significant inductive kickback or unclamped switching events.

Single FETs, MOSFETs Part Context

This part belongs to the IRFBG series of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to provide a balance of fast switching speed, ruggedized design, and low on-resistance. The TO-220AB package is widely used in commercial and industrial applications for power dissipation levels up to approximately 50 W.