IRFD123

$0.90

Description：MOSFET N-CH 100V 1.3A 4DIP
Series：-
Mfr：Harris Corporation
Package：Tube

SKU:a5c21d783e93 Category: Single FETs, MOSFETs Brand: Harris Corporation

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Product introduction

IRFD123 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is MOSFET N-CH 100V 1.3A 4DIP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFD123

Description：MOSFET N-CH 100V 1.3A 4DIP
Series：-
Mfr：Harris Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：4-HVMDIP
Package / Case：4-DIP (0.300", 7.62mm)

Single FETs, MOSFETs datasheet and documents for IRFD123

IRFD123

Single FETs, MOSFETs Overview

The IRFD123 is an N-channel power MOSFET manufactured by Harris Corporation. It features a minimum drain-source breakdown voltage of 100 V and a maximum continuous drain current of 1.1 A. The device has a maximum on-resistance of 0.4 Ω. It utilizes a single configuration with a built-in diode and operates in enhancement mode. The component is housed in an inline plastic epoxy package with three terminals, where the case connection serves as the drain. The maximum operating temperature is rated at 150 °C.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode operation
Integrated body diode configuration
Drain-connected case structure

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as the IRFD123 designation was originally associated with Harris Corporation but later acquired by Vishay. Ensure the specific part number matches the required electrical specifications and package type for your design. Confirm RoHS compliance status if environmental regulations apply to your project requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a low-current, high-voltage N-channel switch is required with a through-hole mounting option. The 100V rating suits moderate voltage applications, while the 1.1A current limit defines its load capacity. Consider the thermal performance within the specified 150°C junction temperature limit during circuit design.

Single FETs, MOSFETs Part Context

This component belongs to the family of N-channel power MOSFETs designed for general-purpose switching applications. The IRFD series typically offers robust performance in compact packages suitable for various electronic circuits requiring reliable semiconductor switching capabilities.