IRFD320PBF

Single FETs, MOSFETs Overview

The IRFD320PBF is a Vishay Siliconix third-generation N-channel power MOSFET housed in an HVMDIP package. It features a drain-source voltage of 400 V and a continuous drain current of 0.49 A at 25 °C. The device has a maximum on-resistance of 1.8 Ω at VGS = 10 V and a total gate charge of 20 nC. It supports a peak diode recovery dV/dt rating of 4.0 V/ns and repetitive avalanche energy up to 48 mJ. Operating junction temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Third-generation silicon technology providing fast switching capabilities and low on-resistance.
• HVMDIP four-pin DIP package designed for automatic insertion and end-stacking on standard pin centers.
• Dual-drain configuration serves as a thermal link to the mounting surface for efficient heat dissipation.
• Repetitive avalanche rated with high ruggedized device design for robust performance.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Resonant circuits
• Power factor correction (PFC) circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it may indicate lead-free status or packaging variations. Confirm that the HVMDIP package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the linear derating factor and maximum power dissipation limits under your specific ambient conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET is required in a through-hole DIP format suitable for automated assembly. The dual-drain layout facilitates stacking multiple units for increased power handling. Consider the 1.8 Ω on-resistance and 20 nC gate charge for applications prioritizing cost-effectiveness and ease of paralleling over ultra-low conduction losses.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix third-generation power MOSFET family, which emphasizes a balance of fast switching, ruggedness, and low on-resistance. The HVMDIP package distinguishes it by offering a machine-insertible case style capable of being stacked in multiple combinations on standard 0.1-inch pin centers.

Single FETs, MOSFETs Replacement Considerations

Consult Vishay datasheets for direct replacements within the IRFD series. Verify that any substitute maintains the 400 V drain-source voltage rating, HVMDIP package compatibility, and equivalent electrical characteristics such as on-resistance and gate charge.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The IRFD320PBF is rated for a single pulse avalanche energy of 48 mJ and a repetitive avalanche energy of 0.10 mJ.

How does the package facilitate thermal management?

The HVMDIP package features a dual-drain design that acts as a thermal link to the mounting surface, aiding in power dissipation levels up to 1 W.

Is the device suitable for automatic insertion?

Yes, the four-pin HVMDIP package is specifically designed as a low-cost, machine-insertible case style compatible with standard 0.1-inch pin centers.