ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRFF232 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFF232
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：25W
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-205AF (TO-39)
- Package / Case：TO-205AF Metal Can
Single FETs, MOSFETs datasheet and documents for IRFF232
Single FETs, MOSFETs Overview
The Harris Corporation IRFF232 is a silicon carbide (SiC) Schottky diode designed for high-temperature and high-voltage applications. It features a robust planar chip architecture that ensures reliable operation under demanding electrical stress conditions. The device is characterized by low forward voltage drop and fast switching capabilities, making it suitable for power conversion systems requiring high efficiency.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide semiconductor material for enhanced thermal performance
- Planar chip construction provides structural stability and reliability
- Schottky barrier design enables rapid switching with minimal reverse recovery charge
Single FETs, MOSFETs Applications
- High-frequency power supply circuits
- DC-DC converter topologies
- Industrial motor drive rectification
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix codes on the component marking to ensure compatibility with your circuit requirements. Confirm the package type matches your PCB footprint specifications. Check the manufacturer's latest datasheet for any updates to mechanical dimensions or thermal characteristics before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when operating environments exceed standard silicon temperature limits. Evaluate the peak repetitive reverse voltage ratings against your system's maximum transient voltages. Ensure the thermal management solution can handle the dissipated power based on the device's thermal resistance parameters.
Single FETs, MOSFETs Part Context
Harris Semiconductor, now part of ON Semiconductor, produced this SiC diode as part of their wide-bandgap portfolio. The IRFF series targets applications where traditional silicon devices fail due to thermal constraints or switching speed limitations. This component represents an evolution in power electronics materials science.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the silicon carbide technology and pin configuration. Verify that substitute parts meet or exceed the original voltage and current ratings. Consult official cross-reference lists from manufacturers for validated alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
