IRFH4251DTRPBF

FET, MOSFET Arrays Overview

The IRFH4251DTRPBF is a dual N-channel HEXFET power MOSFET from the FastIRFET series, housed in a Dual PQFN 5mm x 6mm package. It integrates a control FET (Q1) and a synchronous FET (Q2). Q1 features a maximum RDS(on) of 4.60 mΩ at VGS = 4.5V with a typical gate charge of 10 nC. Q2 offers a maximum RDS(on) of 1.10 mΩ at VGS = 4.5V with a typical gate charge of 44 nC. Both devices have a BVDSS of 25V. Continuous drain current is rated at 45A for both channels at TC = 25°C.

FET, MOSFET Arrays Feature Summary

• Integrates control and synchronous MOSFETs within a single package to increase power density.
• Features low gate charge on the control FET to reduce switching losses.
• Includes an intrinsic Schottky diode on the synchronous channel with low forward voltage.

FET, MOSFET Arrays Applications

• Control and synchronous MOSFETs for synchronous buck converters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm that the part number matches the exact datasheet specifications. Check for RoHS compliance and industrial qualification status as documented. Ensure storage conditions meet MSL1 requirements to prevent moisture damage prior to soldering.

FET, MOSFET Arrays Selection Notes

Select this component when high power density is required in a compact footprint. The integrated design simplifies layout for synchronous rectification. Evaluate thermal performance based on the specific junction-to-case resistance values provided in the datasheet. Consider the distinct electrical characteristics between the control and synchronous channels for optimal converter efficiency.

FET, MOSFET Arrays Part Context

This device belongs to the FastIRFET family of dual power MOSFETs. It utilizes HEXFET technology to achieve low on-state resistance and high transconductance. The Dual PQFN 5x6 package provides efficient thermal dissipation capabilities suitable for surface mount applications.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the same package dimensions and pinout configuration. Verify that alternative components meet the required 25V breakdown voltage and current ratings.