IRFH4257DTRPBF

FET, MOSFET Arrays Overview

The IRFH4257DTRPBF is a dual N-channel HEXFET power MOSFET in a Dual PQFN 5mm x 4mm package. It integrates a control FET (Q1) and a synchronous FET (Q2). Q1 features a maximum RDS(on) of 4.70 mΩ at VGS=4.5V, while Q2 offers 1.80 mΩ. Gate charges are 9.7 nC for Q1 and 23 nC for Q2. Continuous drain currents reach 68A for Q1 and 111A for Q2 at TC=25°C. The device supports a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrates control and synchronous MOSFETs within a single package to increase power density.
• Features low gate charge characteristics to reduce switching losses.
• Includes an intrinsic Schottky diode with low forward voltage on the synchronous FET to minimize switching losses.

FET, MOSFET Arrays Applications

• Control and synchronous MOSFETs for synchronous buck converters

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Infineon datasheet specifications before integration. Confirm that the Dual PQFN 5x4 mm package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your specific operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when high power density is required in synchronous buck converter designs. The integrated dual configuration simplifies layout compared to discrete solutions. Evaluate the low gate charge parameters if minimizing driver power consumption and switching transitions is critical for the target application efficiency.

FET, MOSFET Arrays Part Context

This part belongs to the FastIRFET family from International Rectifier, now part of Infineon Technologies. It utilizes silicon technology and is housed in a lead-free, halogen-free Dual PQFN package. The device meets industrial qualification standards and RoHS compliance requirements.

FET, MOSFET Arrays Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference electrical parameters such as RDS(on), gate charge, and package dimensions to ensure functional compatibility.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in this dual MOSFET?

Q1 serves as the control FET with a higher RDS(on) of 4.70 mΩ, while Q2 acts as the synchronous FET with a lower RDS(on) of 1.80 mΩ to reduce conduction losses.

Does the IRFH4257DTRPBF include a body diode?

Yes, it includes an intrinsic Schottky diode on Q2 with a low forward voltage to improve switching performance.