IRFHM792TRPBF

Description：MOSFET 2N-CH 100V 2.3A 8PQFN
Series：HEXFET®

SKU:ccf5995aa06f Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFHM792TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 2.3A 8PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFHM792TRPBF

Description：MOSFET 2N-CH 100V 2.3A 8PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：195mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id：4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：251pF @ 25V
Power - Max：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-PQFN (3.3x3.3), Power33
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFHM792TRPBF

IRFHM792TRPBF

FET, MOSFET Arrays Overview

The IRFHM792TRPBF is a dual N-channel HEXFET power MOSFET in a PQFN Dual 3.3x3.3 mm package. It features a maximum drain-to-source voltage of 100 V and a continuous drain current of 4.8 A at 25°C, limited to 3.4 A by wirebond capability. The maximum on-resistance is 195 mΩ at VGS = 10V, with a typical total gate charge of 4.2 nC. Power dissipation reaches 10.4 W when mounted on a case bottom at 25°C. The device operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration integrated into a single low-profile surface mount package for space-constrained designs.
Low thermal resistance to the PCB enables efficient heat dissipation without requiring large copper areas.
Industry-standard pinout ensures multi-vendor compatibility and simplifies manufacturing transitions.

FET, MOSFET Arrays Applications

DC-DC primary switching
48V battery monitoring systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets industrial qualification standards and RoHS compliance requirements. Ensure the tape and reel quantity matches the production needs. Check for any end-of-life notices or alternative packaging options if standard reels are unavailable.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in a compact footprint. Evaluate the 195 mΩ on-resistance against conduction loss requirements at the operating current. Consider the 100 V breakdown voltage margin relative to the system's peak drain voltage. Assess the thermal performance based on the expected ambient temperature and PCB layout constraints.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes a PQFN Dual 3.3x3.3 mm package designed for high power density. The device integrates two independent N-channel transistors, offering a compact solution for synchronous rectification or half-bridge configurations where board space is limited.