IRFHS9351TRPBF

$0.81

Description：MOSFET 2P-CH 30V 2.3A PQFN
Series：HEXFET®

SKU:d98d21f7b6ef Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFHS9351TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 2.3A PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFHS9351TRPBF

Description：MOSFET 2P-CH 30V 2.3A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：170mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：3.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：160pF @ 25V
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-PowerVDFN
Supplier Device Package：6-PQFN Dual (2x2)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFHS9351TRPBF

IRFHS9351TRPBF

FET, MOSFET Arrays Overview

The IRFHS9351TRPBF is a dual P-channel HEXFET power MOSFET in a PQFN 2mm x 2mm package. It features a -30V drain-to-source voltage and a maximum on-resistance of 170mΩ at VGS = -10V. The device supports a continuous drain current of -3.4A at TC = 25°C and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual configuration with low thermal resistance for efficient heat dissipation
Low profile design enabling increased power density
Industrial qualification ensuring enhanced reliability

FET, MOSFET Arrays Applications

Charge and discharge switching for battery applications
System or load switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates the standard packaging quantity. Confirm that the component meets industrial qualification standards and RoHS compliance requirements before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact dual P-channel solution. Ensure the gate drive voltage aligns with the specified threshold characteristics. Evaluate the thermal management strategy based on the provided junction-to-ambient resistance values.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon unit area, providing high efficiency and ruggedized device design suitable for demanding power switching environments.