IRFI4019HG-117P

FET, MOSFET Arrays Overview

The IRFI4019HG-117P is a Digital Audio MOSFET Half-Bridge from Infineon Technologies, designed for Class-D audio amplifier applications. It integrates two N-channel enhancement-mode power MOSFETs in a TO-220 Full-Pak 5-pin package. Key electrical parameters include a drain-to-source voltage (VDS) of 150 V and a continuous drain current (ID) of 8.7 A at 25°C case temperature. The typical static drain-to-source on-resistance (RDS(on)) is 80 mΩ at VGS = 10 V, with a maximum of 95 mΩ. Total gate charge (Qg) is typically 13 nC at VGS = 10 V. The device operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge package containing two power MOSFET switches connected in a half-bridge configuration.
• Optimized key parameters including low RDS(ON), low Qg, low Qsw, and low Qrr to improve efficiency, THD, and EMI performance.
• Lead-free and halogen-free package construction.

FET, MOSFET Arrays Applications

• Class-D audio amplifier applications
• Half-bridge configuration amplifiers delivering up to 200W per channel into an 8Ω load

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix HG-117P against official Infineon documentation to confirm the TO-220 Full-Pak 5-pin lead form option. Confirm component status as this part may be subject to discontinuation notices. Ensure compliance with consumer market qualification standards specified in the datasheet. Cross-reference absolute maximum ratings and thermal resistance values during design validation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a pre-matched half-bridge pair to reduce part count and facilitate PCB layout. Consider the 150 V breakdown voltage and 8.7 A current rating for appropriate headroom. Evaluate thermal management requirements based on the 6.9°C/W junction-to-case thermal resistance. Verify that the 13 nC gate charge aligns with the driver capabilities for optimal switching performance.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET series of digital audio MOSFETs. It is specifically engineered to address the demands of high-efficiency audio amplification by optimizing internal gate resistance and body-diode reverse recovery characteristics. The integration of two switches in a single package distinguishes it from discrete single-transistor alternatives.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

FET, MOSFET Arrays FAQ

What is the typical total gate charge (Qg) for the IRFI4019HG-117P?

The typical total gate charge is 13 nC when measured at a gate-to-source voltage of 10 V.

How many MOSFET switches are integrated in this package?

The package contains two power MOSFET switches connected in a half-bridge configuration.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.