IRFI4212H-117PXKMA1

$1.73

Description：MOSFET 2N-CH 100V 11A TO220-5
Series：-

SKU:9dd1ce8db4e1 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFI4212H-117PXKMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 11A TO220-5. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFI4212H-117PXKMA1

Description：MOSFET 2N-CH 100V 11A TO220-5
Series：-
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Rds On (Max) @ Id, Vgs：72.5mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：490pF @ 50V
Power - Max：18W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-5 Full Pack, Formed Leads
Supplier Device Package：TO-220-5 Full-Pak
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFI4212H-117PXKMA1

IRFI4212H-117PXKMA1

FET, MOSFET Arrays Overview

The IRFI4212H-117P is a Digital Audio MOSFET Half-Bridge designed for Class D audio amplifier applications. It integrates two N-channel power MOSFET switches in a TO-220 Full-Pak 5-pin package. Key electrical parameters include a drain-to-source voltage of 100 V, continuous drain current of 11 A at 25°C, and typical on-resistance of 58 mΩ at 10V gate drive. Total gate charge is typically 12 nC, with switch charge at 6.9 nC. The device operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Integrated half-bridge configuration reduces component count by half
Optimized low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low Qrr for better THD and lower EMI

FET, MOSFET Arrays Applications

Class D audio amplifier applications
Half-bridge configuration amplifiers delivering up to 150W per channel into 4Ω load

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to confirm specific tape-and-reel or tube packaging variants. Confirm RoHS compliance status and lead-free package designation as stated in the datasheet. Ensure the procurement matches the specific pinout and thermal characteristics defined for the TO-220 Full-Pak 5-pin form factor.

FET, MOSFET Arrays Selection Notes

Select this component when designing Class D audio amplifiers requiring integrated half-bridge topology. Consider its optimized switching charges (Qg, Qsw) and reverse recovery charge (Qrr) for applications prioritizing total harmonic distortion (THD) and electromagnetic interference (EMI) performance. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET series of digital audio MOSFETs from Infineon Technologies. It utilizes a specialized process to achieve low on-resistance per silicon area. The internal gate resistance and body-diode reverse recovery are specifically tuned to enhance key performance factors for Class D audio amplifier designs.