IRFI530NPBF

Single FETs, MOSFETs Overview

The IRFI530NPbF is a single N-channel enhancement mode power MOSFET from the Fifth Generation HEXFET series. It features a TO-220 Full-Pak package with an isolated tab for direct heat sink mounting without additional insulating hardware. The device offers a drain-source breakdown voltage of 100 V and a maximum continuous drain current of 12 A at 25°C case temperature. Static drain-to-source on-resistance is limited to 0.11 Ω at VGS = 10 V. The component supports a junction temperature range of -55°C to +175°C and includes a built-in body diode.

Single FETs, MOSFETs Feature Summary

• TO-220 Full-Pak package provides high isolation capability (2.5 kVRMS) and low thermal resistance, eliminating the need for separate insulating hardware during installation.
• Advanced processing technology achieves low on-resistance per silicon area combined with fast switching speeds and ruggedized design.
• Fully avalanche rated with high reliability, supporting single pulse avalanche energy up to 150 mJ.

Single FETs, MOSFETs Applications

• Commercial and industrial applications requiring high voltage isolation
• General purpose switching circuits
• Power management systems

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required package variant. Confirm RoHS compliance status as indicated in the qualification section. Ensure the application environment respects the absolute maximum ratings, particularly regarding thermal derating factors and junction temperature limits. Check for automotive qualification disclaimers if used in vehicle electronics.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation between the heat sink and circuit ground is required. The TO-220 Full-Pak simplifies mechanical assembly by removing the need for mica washers or thermal pads. Consider the 0.11 Ω on-resistance for conduction loss calculations at 12 A. Evaluate thermal impedance characteristics against the expected ambient conditions and duty cycles.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET Power MOSFET family manufactured by Infineon Technologies. It utilizes advanced processing techniques to optimize performance metrics such as on-resistance and switching speed. The product is designed for commercial-industrial environments and is not qualified according to AEC Q100 or AEC Q101 automotive standards.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameter margins before substituting with other N-channel MOSFETs in the same voltage and current class.