IRFI620

Description：MOSFET N-CH 200V 4.1A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:87d3f0752bb5 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFI620 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 4.1A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFI620

Description：MOSFET N-CH 200V 4.1A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：800mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：260 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for IRFI620

IRFI620

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFI620 is a third-generation N-channel power MOSFET housed in an isolated TO-220 FULLPAK package. It features a drain-source voltage of 200 V and a maximum continuous drain current of 4.1 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.80 Ω at VGS = 10 V and a total gate charge of 14 nC. Thermal performance includes a junction-to-case resistance of 4.1 °C/W and a maximum power dissipation of 30 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Integrated high-voltage isolation capability within the molded package, eliminating the need for external insulating hardware.
Ruggedized design featuring avalanche rugged technology and dynamic dV/dt rating for enhanced reliability.
Optimized switching characteristics with low thermal resistance and low input capacitance.

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring electrical isolation without additional mounting hardware
High voltage DC-DC converters
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., PbF) against the datasheet to confirm lead-free compliance status. Ensure the procurement matches the exact package type TO-220 FULLPAK. Confirm that the application environment respects the absolute maximum ratings for voltage, current, and power dissipation. Validate thermal management requirements against the specified junction-to-case resistance values.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required directly from the package body. The TO-220 FULLPAK design simplifies heatsinking by removing the need for separate insulators. Consider the 200 V breakdown voltage and 0.8 Ω on-resistance for efficiency requirements. Verify that the 4.1 A continuous current rating meets the load demands at the expected operating case temperature.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix third-generation power MOSFET family. These transistors are engineered to balance fast switching speeds with low on-resistance. The TO-220 FULLPAK variant specifically addresses commercial and industrial needs by providing inherent insulation. This distinguishes it from standard TO-220 packages that require external isolation barriers.