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IRFIZ46NPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 33A TO220AB FP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFIZ46NPBF
- Description：MOSFET N-CH 55V 33A TO220AB FP
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB Full-Pak
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for IRFIZ46NPBF
Single FETs, MOSFETs Overview
The IRFIZ46NPBF is an N-channel enhancement-mode MOSFET from the HEXFET family, manufactured by Infineon Technologies. It features a 55V drain-source voltage rating and supports continuous drain currents up to 33A at case temperature or 54A in specific configurations. The device utilizes advanced process technology to achieve ultra-low on-resistance of 13.6 milliohms. Designed for through-hole mounting in TO-220AB FullPak packages, it offers high efficiency and fast switching capabilities with a gate charge of 38.7 nanocoulombs.
Single FETs, MOSFETs Feature Summary
- Advanced silicon process technology enabling ultra-low on-resistance for improved conduction efficiency
- Fast switching characteristics optimized for high-frequency power conversion applications
- Robust thermal performance within the TO-220AB FullPak package suitable for through-hole integration
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converter circuits
- Power management systems requiring low loss switching
- General-purpose power control applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm package integrity and pin alignment against the TO-220AB FullPak specification sheet. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Cross-reference ordering information with current datasheet revisions to confirm availability status.
Single FETs, MOSFETs Selection Notes
Select this component when a 55V N-channel MOSFET with low Rds(on) is required for through-hole designs. Compare gate charge and thermal resistance against alternative packages if space constraints exist. Validate that the 33A continuous current rating meets the specific load requirements under expected operating temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET series of power MOSFETs known for high reliability and efficiency. It represents a standard solution for medium-voltage switching applications where through-hole mounting is preferred over surface-mount technologies. The device complements other components in power supply designs requiring robust N-channel switching elements.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IRFZ46ZLFPBF and IRFZ46NPBF. Verify pin compatibility and electrical parameters such as Vds and Id before substitution. Ensure the replacement package matches the existing PCB footprint requirements.
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