Single FETs, MOSFETs IRFIZ48GPBF product image

IRFIZ48GPBF

$2.63
  • Description:MOSFET N-CH 60V 37A TO220-3
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:e3445e5b4bba Category: Brand:

  
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IRFIZ48GPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 37A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFIZ48GPBF

  • Description:MOSFET N-CH 60V 37A TO220-3
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for IRFIZ48GPBF

IRFIZ48GPBF

Single FETs, MOSFETs Overview

The IRFIZ48GPBF is a Vishay Siliconix N-Channel Power MOSFET in a TO-220 FULLPAK package. It features a 60 V drain-source voltage and a maximum on-resistance of 18 mΩ at 10 V gate drive. The device supports a continuous drain current of 37 A at 25 °C case temperature, with a pulsed current rating of 150 A. Key dynamic parameters include a total gate charge of 110 nC and a peak diode recovery dV/dt rating of 4.5 V/ns. Thermal resistance from junction to case is typically 3.0 °C/W.

Single FETs, MOSFETs Feature Summary

  • Integrated high-voltage isolation capability within the molded package, eliminating the need for external insulating hardware.
  • Third-generation silicon technology providing optimized switching speed and ruggedized device design.
  • Low thermal resistance construction allowing direct heatsink mounting via single clip or screw fixing.

Single FETs, MOSFETs Applications

  • Commercial-industrial power switching applications requiring electrical isolation
  • High-frequency DC-DC converters
  • Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific order suffix matches the required lead-free (Pb-free) configuration. Confirm the package type corresponds to the TO-220 FULLPAK variant rather than standard through-hole packages. Ensure the procurement documentation references the correct Vishay document number 91190 for accurate technical specifications.

Single FETs, MOSFETs Selection Notes

Select this component when application requirements demand both high current handling and electrical isolation without additional mounting hardware. The low on-resistance minimizes conduction losses, while the integrated isolation simplifies mechanical assembly. Verify that the 60 V breakdown voltage aligns with the system's maximum operating voltage.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay IRFZ series of third-generation power MOSFETs. It utilizes the TO-220 FULLPAK package, which integrates high-voltage isolation directly into the molding compound. This design replaces traditional setups requiring separate mica insulators, offering a compact solution for industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

IRFZ48R

Single FETs, MOSFETs FAQ

Does the IRFIZ48GPBF require an insulating washer for mounting?

No, the TO-220 FULLPAK package provides inherent high-voltage isolation between the drain tab and the leads, eliminating the need for additional insulating hardware.

What is the maximum operating junction temperature?

The device supports an operating junction and storage temperature range from -55 °C to +175 °C.

IRFIZ48GPBFIRFIZ48GPBF
$2.63
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