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IRFIZ48GPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 37A TO220-3. Review the specifications below when checking this part for your BOM.
The IRFIZ48GPBF is a Vishay Siliconix N-Channel Power MOSFET in a TO-220 FULLPAK package. It features a 60 V drain-source voltage and a maximum on-resistance of 18 mΩ at 10 V gate drive. The device supports a continuous drain current of 37 A at 25 °C case temperature, with a pulsed current rating of 150 A. Key dynamic parameters include a total gate charge of 110 nC and a peak diode recovery dV/dt rating of 4.5 V/ns. Thermal resistance from junction to case is typically 3.0 °C/W.
Verify that the specific order suffix matches the required lead-free (Pb-free) configuration. Confirm the package type corresponds to the TO-220 FULLPAK variant rather than standard through-hole packages. Ensure the procurement documentation references the correct Vishay document number 91190 for accurate technical specifications.
Select this component when application requirements demand both high current handling and electrical isolation without additional mounting hardware. The low on-resistance minimizes conduction losses, while the integrated isolation simplifies mechanical assembly. Verify that the 60 V breakdown voltage aligns with the system's maximum operating voltage.
This part belongs to the Vishay IRFZ series of third-generation power MOSFETs. It utilizes the TO-220 FULLPAK package, which integrates high-voltage isolation directly into the molding compound. This design replaces traditional setups requiring separate mica insulators, offering a compact solution for industrial power electronics.
IRFZ48R
No, the TO-220 FULLPAK package provides inherent high-voltage isolation between the drain tab and the leads, eliminating the need for additional insulating hardware.
The device supports an operating junction and storage temperature range from -55 °C to +175 °C.
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