IRFL110TRPBF-BE3

$0.79

Description：MOSFET N-CH 100V 1.5A SOT223
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fca96eb9d63c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFL110TRPBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 1.5A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFL110TRPBF-BE3

Description：MOSFET N-CH 100V 1.5A SOT223
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 3.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRFL110TRPBF-BE3

IRFL110TRPBF-BE3

Single FETs, MOSFETs Overview

The IRFL110TRPBF-BE3 is a Vishay Siliconix N-channel power MOSFET housed in a SOT-223 surface-mount package. It features a drain-source voltage of 100 V and a continuous drain current of 1.5 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.54 Ω at VGS = 10 V and a total gate charge of 8.3 nC. Thermal performance includes a junction-to-case resistance of 40 °C/W and a maximum power dissipation of 3.1 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Third-generation silicon technology providing optimized switching speed and low on-resistance
Repetitive avalanche rated for robustness against inductive load transients
SOT-223 package design with an enlarged tab for improved thermal dissipation
Fast switching characteristics with dynamic dV/dt rating

Single FETs, MOSFETs Applications

Surface-mount power switching circuits
Inductive load driving applications
General-purpose power management designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix BE3, which indicates manufacturing at an alternate location compared to GE3 variants. Confirm RoHS compliance status and REACH SVHC declarations directly through official Vishay documentation channels prior to integration. Ensure component authenticity by sourcing only from authorized distribution networks.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact SOT-223 footprint with moderate voltage handling capabilities. Evaluate the 0.54 Ω on-resistance against thermal constraints, as power dissipation is limited to 3.1 W at 25 °C case temperature. Consider the 1.5 A continuous current limit when designing for steady-state loads.

Single FETs, MOSFETs Part Context

This part belongs to the IRFL/SiHFL series of high-voltage power MOSFETs manufactured by Vishay Siliconix. These devices utilize third-generation planar technology to deliver enhanced ruggedness and efficiency within standard surface-mount packages suitable for automated assembly processes.