IRFP15N60LPBF

$2.23

Description：MOSFET N-CH 600V 15A TO247-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:563e5e22ffe7 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFP15N60LPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 15A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP15N60LPBF

Description：MOSFET N-CH 600V 15A TO247-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：460mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2720 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：280W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP15N60LPBF

IRFP15N60LPBF

Single FETs, MOSFETs Overview

The IRFP15N60LPBF is a Vishay Siliconix N-channel Power MOSFET in a TO-247 package. It features a 600 V drain-source voltage and a continuous drain current of 15 A at 25 °C case temperature. The device has a maximum on-state resistance of 0.460 Ω at VGS = 10 V. Total gate charge is limited to 100 nC, with gate-source and gate-drain charges of 30 nC and 46 nC respectively. Maximum power dissipation is 280 W at 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Superfast body diode eliminates the need for external diodes in zero voltage switching applications
Lower gate charge results in simple drive requirements
Enhanced dV/dt capabilities offer improved ruggedness
Higher gate voltage threshold offers improved noise immunity

Single FETs, MOSFETs Applications

Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and compliance specifications. Ensure the component matches the exact Vishay part number required for your design. Cross-reference datasheet revision numbers to confirm technical parameters align with your project requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage handling and fast switching are required. The enhanced dV/dt rating provides superior ruggedness compared to standard devices. Consider the thermal management needs associated with its 280 W dissipation capability. Verify that the gate drive circuitry can accommodate the specified gate charge levels for optimal performance.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix IRFP series of N-channel Power MOSFETs. It utilizes silicon technology and is housed in a TO-247 through-hole package. The device is designed for general-purpose power switching applications requiring high voltage blocking capabilities and efficient thermal performance.