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IRFP17N50LPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 16A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFP17N50LPBF
- Description：MOSFET N-CH 500V 16A TO247-3
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：320mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2760 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：220W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AC
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IRFP17N50LPBF
Single FETs, MOSFETs Overview
The IRFP17N50LPBF is a Vishay Siliconix N-channel power MOSFET in the TO-247AC package. It features a drain-source breakdown voltage of 500 V and a continuous drain current of 17 A at 25°C. The device has a maximum on-resistance of 0.38 Ω at 10 V gate drive and a typical gate charge of 68 nC. Power dissipation reaches 200 W, with an operating temperature range from -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- SuperFast body diode designed for zero-voltage switching applications
- Low gate charge simplifies driver requirements
- Planar cell technology enhances avalanche ruggedness
Single FETs, MOSFETs Applications
- Zero-voltage switching (ZVS) converters
- High-frequency power supplies
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and lead-free status. Confirm availability as manufacturing status may vary. Ensure thermal management meets the 200 W dissipation requirement. Check RoHS compliance documentation before integration.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring fast switching speeds. The low gate charge reduces driver complexity. Compare on-resistance values against thermal constraints. Verify that the TO-247AC footprint matches the PCB design. Consider avalanche energy ratings for inductive loads.
Single FETs, MOSFETs Part Context
This part belongs to the IRFP series of high-voltage N-channel MOSFETs. It utilizes planar cell technology for improved performance. The series is designed for general-purpose power switching. It offers a balance between conduction losses and switching speed.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible substitutes with similar Rds(on) and Vds ratings. Verify that any replacement maintains the SuperFast diode characteristics if ZVS operation is required. Ensure thermal resistance parameters are compatible.
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