IRFP3206PBF

$3.05

Description：MOSFET N-CH 60V 120A TO247AC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:7b62182c165a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFP3206PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A TO247AC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP3206PBF

Description：MOSFET N-CH 60V 120A TO247AC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6540 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：280W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP3206PBF

IRFP3206PBF

Single FETs, MOSFETs Overview

The IRFP3206PbF is a single N-channel HEXFET power MOSFET in a TO-247 package. It features a 60V drain-to-source breakdown voltage and a maximum on-resistance of 3.0mΩ at VGS=10V. The device supports a continuous drain current of 200A (silicon limited) or 120A (package limited). Key dynamic parameters include a total gate charge of 120nC, turn-on delay time of 19ns, and rise time of 82ns. Thermal resistance from junction to case is 0.54°C/W, with an operating temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Worldwide best RDS(on) performance in the TO-247 package
Fully characterized capacitance and avalanche safe operating area
Enhanced body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'PbF' against the manufacturer's official documentation to confirm lead-free compliance status. Ensure the component matches the TO-247AC physical outline dimensions for proper mounting. Confirm that the part number corresponds to the correct revision level before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 60V applications. The silicon-limited current rating of 200A requires adequate thermal management to maintain junction temperatures within limits. Consider the package-limited current of 120A if lead heating is a concern. Evaluate the avalanche energy characteristics for inductive load protection requirements.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon HEXFET family of power MOSFETs. It utilizes trench technology to achieve low on-resistance. The TO-247AC package provides robust mechanical stability for through-hole mounting. It is designed for high-power density applications requiring efficient switching and reliable operation under demanding electrical conditions.