IRFP4368PBFXKMA1

Single FETs, MOSFETs Overview

The IRFP4368PBFXKMA1 is a single N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-247AC-3 through-hole package. The device features a drain-source breakdown voltage of 75 V and a maximum continuous drain current of 195 A at 25°C, limited by the package. The typical on-resistance is 1.46 mΩ with a maximum of 1.85 mΩ at VGS = 10V. Total gate charge is typically 380 nC. Operating junction temperature ranges from -55°C to +175°C, with a maximum power dissipation of 520 W.

Single FETs, MOSFETs Feature Summary

• Enhanced body diode dV/dt and dI/dt capability for improved ruggedness
• Fully characterized capacitance and avalanche safe operating area (SOA)
• Improved gate, avalanche, and dynamic dV/dt performance

Single FETs, MOSFETs Applications

• High efficiency synchronous rectification in switch-mode power supplies
• Uninterruptible power supply systems
• High speed power switching circuits
• Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix PBFXKMA1 against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status directly from the manufacturer's datasheet or product qualification reports before procurement. Ensure the component matches the required TO-247AC-3 lead frame dimensions for your PCB footprint.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance value below 2 mΩ is required for high-current applications up to 195 A. Consider the thermal resistance characteristics and the need for robust avalanche energy handling capabilities. Evaluate the gate charge requirements against your driver's output current capacity to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET family of power MOSFETs designed for high-efficiency power conversion. It represents an evolution in silicon-based discrete semiconductor devices optimized for reducing conduction losses while maintaining high reliability under harsh electrical conditions.

Single FETs, MOSFETs Replacement Considerations

The base part number IRFP4368PbF serves as a direct equivalent within the same product line. Verify pinout compatibility and thermal interface requirements when substituting.