IRFP4468PBFXKMA1

$4.56

Description：TRENCH >=100V PG-TO247-3
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:6c8a41b357f8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFP4468PBFXKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V PG-TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP4468PBFXKMA1

Description：TRENCH >=100V PG-TO247-3
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：290A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：540 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：19860 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：520W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP4468PBFXKMA1

IRFP4468PBFXKMA1

Single FETs, MOSFETs Overview

The IRFP4468PBFXKMA1 is a 100 V N-channel StrongIRFET™ Power MOSFET manufactured by Infineon Technologies. It features a PG-TO247-3 package with a maximum drain-source breakdown voltage of 100 V and a continuous drain current of 195 A at 25 °C. The device exhibits a maximum on-state resistance of 2.6 mΩ and a total gate charge of 363 nC. It supports an operating temperature range from -55 °C to +175 °C, with a single-pulse avalanche energy rating of 740 mJ.

Single FETs, MOSFETs Feature Summary

Enhanced ruggedness for gate, avalanche, and dynamic dV/dt performance
Fully characterized capacitance and avalanche safe operating area (SOA)
Qualified according to JEDEC standards for industrial applications
Pb-free lead plating compliant with RoHS and IEC61249-2-21 halogen-free requirements

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in switch-mode power supplies
Uninterruptible power supply systems
Hard switched and high frequency circuits
High speed power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required environmental certifications, including RoHS compliance and halogen-free status per IEC61249-2-21. Ensure the procurement channel provides valid traceability data for industrial-grade qualification.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its 2.6 mΩ maximum on-resistance. Consider the 195 A continuous current capability and 780 A pulsed current rating for high-power applications. Evaluate the thermal resistance of 0.29 K/W for heat dissipation requirements. Verify compatibility with the PG-TO247-3 through-hole mounting style.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET™ family, designed for robust performance in demanding environments. It utilizes advanced silicon technology to achieve high current density and low on-resistance within the TO-247 form factor. The product line emphasizes reliability through rigorous testing protocols aligned with industrial standards.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and thermal characteristics.