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IRFP4868PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IRFP4868 - 12V-300V N-CHANNEL PO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFP4868PBF
- Description：IRFP4868 - 12V-300V N-CHANNEL PO
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10774 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：517W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AC
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IRFP4868PBF
Single FETs, MOSFETs Overview
The IRFP4868PBF is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology and housed in a TO-247 through-hole package. It features a maximum drain-source voltage of 300 V and a continuous drain current of 70 A at 25°C. The device exhibits a maximum on-resistance of 32 mΩ at 10 V gate drive and a typical total gate charge of 180 nC. Thermal performance includes a junction-to-case thermal resistance of 0.29 K/W, with an operating junction temperature range up to 175°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology integration for optimized switching performance
- High avalanche energy capability for robust operation
- Low on-state resistance for efficient conduction
Single FETs, MOSFETs Applications
- Motor control systems
- Power factor correction circuits
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin details directly with the supplier or manufacturer documentation prior to procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage handling and low conduction losses. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive voltages align with the threshold and maximum ratings defined in the electrical characteristics table.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS power transistor family, designed for general-purpose power switching applications. The TO-247 package provides mechanical stability and effective heat dissipation capabilities suitable for industrial and automotive environments.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitutes. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers.
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