IRFR1N60APBF

$1.49

Description：MOSFET N-CH 600V 1.4A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:f5696625717e Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR1N60APBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 1.4A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR1N60APBF

Description：MOSFET N-CH 600V 1.4A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：229 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR1N60APBF

IRFR1N60APBF

Single FETs, MOSFETs Overview

The IRFR1N60APBF is a Vishay Siliconix N-Channel Power MOSFET housed in a DPAK (TO-252) surface-mount package. It features a 600 V drain-source breakdown voltage and a maximum on-state resistance of 7.0 Ω at VGS = 10 V. The device supports a continuous drain current of 1.4 A at 25 °C case temperature, with a total gate charge of 14 nC. It operates within a junction temperature range of -55 °C to +150 °C and offers a peak power dissipation of 36 W.

Single FETs, MOSFETs Feature Summary

Low gate charge facilitates simple drive requirements
Improved ruggedness regarding gate, avalanche, and dynamic dV/dt performance
Fully characterized capacitance and avalanche voltage and current ratings

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
Power factor correction
Low power single transistor flyback topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes and manufacturing origin. Confirm that the component matches the required lead-free specifications and package orientation for your assembly process. Ensure all electrical parameters align with your design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low-power switching capabilities. The DPAK package provides a balance between thermal management and space efficiency. Evaluate the 7.0 Ω on-resistance against your conduction loss requirements and ensure the 1.4 A current rating meets your circuit's peak demands.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/U series of high-voltage N-Channel Power MOSFETs from Vishay Siliconix. It utilizes silicon technology and is designed for general-purpose switching applications. The DPAK package allows for efficient heat dissipation through the drain pad while maintaining a compact footprint suitable for automated surface-mount assembly.