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IRFR2407TRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 42A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFR2407TRRPBF
- Description：MOSFET N-CH 75V 42A DPAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IRFR2407TRRPBF
Single FETs, MOSFETs Overview
The IRFR2407TRRPBF is a single N-channel power MOSFET from the HEXFET family, manufactured by Infineon Technologies. It utilizes DPAK (TO-252) surface-mount packaging and operates with a maximum drain-source voltage of 75 V. The device supports a continuous drain current of 42 A at 25°C and dissipates up to 110 W of power. Key electrical parameters include a typical on-resistance of 26 mΩ at 10 V gate drive, a total gate charge of 74 nC, and a junction temperature range extending to 175°C.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance for high efficiency in switching applications
- Wide Safe Operating Area (SOA) capability for robust performance
- Lead-free plating compliant with RoHS standards
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix TRRPBF against official Infineon documentation to confirm reel specifications and tape-and-reel dimensions. Ensure the component matches the required DPAK footprint and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to validate that all absolute maximum ratings and thermal characteristics align with your design constraints before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a 75 V rating with high current handling capabilities around 42 A. The DPAK package offers a balance between thermal dissipation and compact surface-mount integration. Consider the 26 mΩ on-resistance for conduction loss calculations and ensure the gate driver can supply sufficient current to manage the 74 nC gate charge effectively during switching transitions.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET series of power MOSFETs produced by Infineon Technologies. The HEXFET technology is characterized by its planar stripe structure, which contributes to low on-resistance and fast switching speeds. The IRFR2407 variant specifically targets applications needing reliable N-channel switching within the 75 V voltage class.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides or cross-reference tools provided by Infineon for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pin compatibility and thermal performance data.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
