IRFR3704

$1.27

Description：MOSFET N-CH 20V 75A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:f8b180d36ff2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR3704 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 75A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR3704

Description：MOSFET N-CH 20V 75A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1996 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR3704

IRFR3704

Single FETs, MOSFETs Overview

The IRFR3704 is a single N-channel HEXFET Power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 20V and an ultra-low on-resistance of 9.5mΩ at VGS=10V. The device supports a continuous drain current of 75A at case temperature of 25°C and a pulsed current of 300A. Key electrical parameters include a total gate charge of 19nC, a threshold voltage range of 1.0V to 3.0V, and a junction temperature range of -55°C to +175°C. It is available in D-Pak (TO-252AA) and I-Pak (TO-251AA) surface-mount packages.

Single FETs, MOSFETs Feature Summary

Ultra-low on-resistance for high efficiency
Very low gate impedance for fast switching
Fully characterized avalanche voltage and current ratings

Single FETs, MOSFETs Applications

High frequency DC-DC isolated converters with synchronous rectification for telecom and industrial use
High frequency Buck converters for computer processor power

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the IRFR3704 designation covers both D-Pak and I-Pak forms. Confirm that the application design accounts for the absolute maximum ratings, particularly the 20V breakdown limit and thermal constraints. Ensure sourcing channels provide original manufacturer documentation to validate component authenticity and compliance with industrial market qualification standards.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current synchronous rectification solution is needed. The 20V rating suits 12V bus architectures. Consider the 9.5mΩ resistance for conduction loss optimization. Verify that the PCB footprint matches either the TO-252AA or TO-251AA outline before finalizing the design.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon. It is designed specifically for high-frequency switching applications where low gate drive power and minimal conduction losses are critical. The device utilizes advanced planar strip technology to achieve its performance metrics within standard surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 20V N-channel MOSFETs offering similar RDS(on) and Qg values. Ensure any substitute maintains compatible pinout configurations for D-Pak or I-Pak packages and meets the same avalanche energy requirements if used in inductive loads.