IRFR3709ZTRLPBF

$1.16

Description：MOSFET N-CH 30V 86A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3f8c6e21657c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR3709ZTRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 86A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR3709ZTRLPBF

Description：MOSFET N-CH 30V 86A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2330 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR3709ZTRLPBF

IRFR3709ZTRLPBF

Single FETs, MOSFETs Overview

The IRFR3709ZTRLPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 30V drain-to-source voltage rating and a maximum on-resistance of 6.5mΩ at VGS=10V. The device supports a continuous drain current of 86A at 25°C case temperature and handles pulsed currents up to 340A. Key electrical characteristics include a total gate charge of 17nC, a threshold voltage range of 1.35V to 2.25V, and a junction-to-case thermal resistance of 1.9°C/W. It operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Ultra-low gate impedance for efficient switching performance
Very low RDS(on) at 4.5V VGS enabling effective low-voltage drive
Fully characterized avalanche voltage and current capabilities

Single FETs, MOSFETs Applications

High frequency synchronous buck converters for computer processor power
High frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity against official Infineon specifications before integration. Confirm that the D-Pak (TO-252) package dimensions match your PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance. Check for lead-free compliance markings if required by your manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when low gate drive power and fast switching are critical. The low Qg minimizes driver losses in high-frequency applications. Evaluate the 30V rating against peak transient voltages in your circuit. Consider the body diode reverse recovery characteristics if used in synchronous rectification topologies.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The D-Pak package provides a balance between current handling capability and surface-mount convenience for industrial and telecommunications equipment.