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IRFR3711ZTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 93A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFR3711ZTR
- Description：MOSFET N-CH 20V 93A DPAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2160 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IRFR3711ZTR
Single FETs, MOSFETs Overview
The IRFR3711ZTR is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a DPAK (TO-252) surface-mount package. It features a 20V drain-to-source voltage rating and supports a continuous drain current of 93A at a case temperature of 25°C. The device exhibits an ultra-low on-resistance of 4.5mΩ typical value at VGS=4.5V, with a maximum of 5.7mΩ. Key dynamic characteristics include a total gate charge of 18nC typical and a forward transconductance of 48S. It operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Ultra-low gate impedance for reduced switching losses
- Very low RDS(on) at 4.5V VGS for high efficiency
- Fully characterized avalanche voltage and current capabilities
Single FETs, MOSFETs Applications
- High frequency synchronous buck converters for computer processor power
- High frequency isolated DC-DC converters with synchronous rectification for telecom use
- High frequency isolated DC-DC converters with synchronous rectification for industrial use
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'TR' corresponds to the required reel packaging configuration before procurement. Confirm that the component meets all applicable RoHS directives and environmental standards relevant to your manufacturing region. Ensure compatibility with standard SMD/SMT assembly processes for the DPAK-3 footprint.
Single FETs, MOSFETs Selection Notes
Select this component when applications demand low conduction losses at moderate gate drive voltages. The low gate charge minimizes driver requirements, making it suitable for high-frequency operation. Evaluate thermal management strategies carefully, as the device supports high currents but requires adequate heat dissipation to maintain performance within the specified operating temperature limits.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is designed for robust performance in power conversion circuits. The DPAK package provides a balance between current handling capability and compact surface-mount integration.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools or manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without verifying pinout and thermal characteristics.
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