IRFR4105TRPBF

Single FETs, MOSFETs Overview

The IRFR4105TRPBF is a fifth-generation HEXFET N-channel power MOSFET manufactured by Infineon Technologies. It features a D-PAK (TO-252AA) surface-mount package and utilizes advanced processing techniques to achieve ultra-low on-resistance per silicon area. The device provides a drain-to-source breakdown voltage of 55V, a continuous drain current of 27A at 25°C case temperature, and a maximum static drain-to-source on-resistance of 0.045Ω at VGS=10V. It supports an operating junction temperature range from -55°C to +175°C with a power dissipation rating of 68W.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-resistance achieved through advanced processing techniques for high efficiency
• Fast switching speed combined with ruggedized device design
• Fully avalanche rated with specified single pulse and repetitive energy capabilities
• Designed for surface mounting using vapor phase, infrared, or wave soldering

Single FETs, MOSFETs Applications

• High-efficiency power conversion circuits
• Motor drive applications requiring fast switching
• General-purpose switching applications utilizing low on-resistance benefits

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity against official Infineon documentation. Confirm that the ordering suffix TRPBF corresponds to the tape-and-reel packaging format required for automated assembly processes. Ensure compliance with RoHS directives as indicated in the datasheet specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require robust avalanche performance alongside low conduction losses. The 55V rating suits specific low-voltage power stages. Evaluate thermal management requirements based on the 2.2°C/W junction-to-case thermal resistance to ensure operation within the 175°C maximum junction temperature limit under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs produced by Infineon Technologies. It represents the fifth generation of this technology line, focusing on minimizing on-resistance per unit area. The product is available in lead-free versions, designated by the PbF suffix, aligning with environmental standards for electronic components.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference absolute maximum ratings and thermal characteristics carefully when considering alternative parts to ensure compatibility with existing circuit designs.