IRFR4105Z

$1.12

Description：MOSFET N-CH 55V 30A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:b8072842cfa9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR4105Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 30A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR4105Z

Description：MOSFET N-CH 55V 30A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR4105Z

IRFR4105Z

Single FETs, MOSFETs Overview

The IRFR4105Z is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 55V drain-source breakdown voltage and an ultra-low on-resistance of 24.5mΩ at VGS=10V. The device supports a continuous drain current of 30A at 25°C case temperature and operates up to a maximum junction temperature of 175°C. Packaged in the D-Pak (TO-252AA) surface-mount format, it includes an integral body diode with fast reverse recovery characteristics.

Single FETs, MOSFETs Feature Summary

Advanced process technology designed for automotive applications achieving extremely low on-resistance per silicon area
Fast switching speed combined with improved repetitive avalanche rating allowed up to Tjmax
High thermal performance supporting 175°C operating junction temperature

Single FETs, MOSFETs Applications

Automotive electronic systems
General purpose switching applications
Power conversion circuits requiring high efficiency

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeits. Confirm RoHS compliance status and lead-free packaging specifications against the latest manufacturer documentation. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Validate that the specific lot code matches current production standards.

Single FETs, MOSFETs Selection Notes

Select this component when design requirements prioritize fast switching speeds and low gate drive power consumption over absolute minimum conduction losses. The device is suitable for applications where moderate current handling is sufficient but rapid turn-on and turn-off transitions are critical. Consider the thermal resistance limits when designing heat dissipation strategies for high-duty cycle operations.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes planar strip technology to optimize the trade-off between on-resistance and switching performance. The D-Pak package provides a robust mechanical connection and efficient heat transfer path to the PCB copper pour for thermal management.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRFU4105ZPBF which shares identical electrical specifications but utilizes the I-Pak (TO-251AA) through-hole package. Verify pinout compatibility and thermal interface differences before implementation.