IRFR420PBF

$1.08

Description：MOSFET N-CH 500V 2.4A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:fd3f72db3ce2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR420PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 2.4A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR420PBF

Description：MOSFET N-CH 500V 2.4A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR420PBF

IRFR420PBF

Single FETs, MOSFETs Overview

The IRFR420PBF is a third-generation N-Channel Power MOSFET from Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage of 500 V and a continuous drain current of 2.4 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 3.0 Ω at VGS = 10 V and a total gate charge of 19 nC. It supports repetitive avalanche energy ratings up to 400 mJ and includes dynamic dV/dt rating capabilities for ruggedized switching performance.

Single FETs, MOSFETs Feature Summary

Third-generation power MOSFET technology providing optimized fast switching and low on-resistance
Repetitive avalanche rated with high ruggedness for demanding switching applications
Dynamic dV/dt rating ensures reliable operation during rapid voltage transitions
Designed for ease of paralleling to support higher current requirements

Single FETs, MOSFETs Applications

High-voltage DC-to-DC converter circuits
Motor control systems requiring robust switching elements
Power supply designs utilizing surface-mount assembly techniques

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance attributes such as lead-free status or halogen-free designation. Ensure the selected variant matches the required package type and thermal characteristics for your application design.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V breakdown voltage and moderate current handling are required in a compact surface-mount form factor. Consider the thermal resistance and derating curves for accurate power dissipation calculations under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR series of N-Channel Power MOSFETs manufactured by Vishay Siliconix. The series utilizes TrenchFET technology to deliver improved performance metrics compared to previous generations, balancing switching speed with conduction losses in standard industrial packages.