IRFR540ZTRPBF

$1.52

Description：MOSFET N-CH 100V 35A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:22f30c9fc6ad Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR540ZTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 35A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR540ZTRPBF

Description：MOSFET N-CH 100V 35A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id：4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1690 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：91W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR540ZTRPBF

IRFR540ZTRPBF

Single FETs, MOSFETs Overview

The IRFR540ZTRPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 100V drain-source breakdown voltage and a maximum on-resistance of 28.5mΩ at VGS=10V. The device supports a continuous drain current of 35A at 25°C case temperature and handles a pulsed drain current of 140A. Total gate charge is typically 39nC, with input capacitance of 1690pF. Power dissipation reaches 91W at 25°C case temperature. The component operates within a junction temperature range of -55°C to +175°C and utilizes the D-Pak (TO-252) surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Supports repetitive avalanche operation up to the maximum junction temperature limit.
Designed for fast switching speeds to enhance efficiency in high-frequency applications.

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power amplifiers

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix TRRPBF corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm the specific manufacturing date code and lot traceability align with project quality standards. Ensure compliance with RoHS and REACH directives as indicated in the official documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and low conduction losses are critical for the design. Evaluate the thermal management requirements based on the 1.64°C/W junction-to-case thermal resistance. Consider the 35A continuous current capability relative to the expected load profile and ambient operating conditions to ensure reliable performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a standard industrial-grade discrete semiconductor designed for robust switching performance. The device integrates an intrinsic body diode suitable for inductive load commutation.