IRFS4410TRLPBF

Single FETs, MOSFETs Overview

The IRFS4410TRLPBF is a single N-channel power MOSFET manufactured by Infineon Technologies, utilizing OptiMOS technology. It features a D2PAK (TO-262) surface-mount package with a drain-to-source breakdown voltage of 100 V and a maximum continuous drain current of 88 A at 25°C case temperature. The device exhibits a typical static drain-to-source on-resistance of 8.0 mΩ, with a maximum rating of 10 mΩ at a gate-to-source voltage of 10 V. Key dynamic parameters include a total gate charge of 120 nC and an effective output capacitance of 420 pF. The component supports a junction temperature range from -55°C to +175°C and offers enhanced ruggedness characteristics for avalanche and dynamic dV/dt performance.

Single FETs, MOSFETs Feature Summary

• Optimized body diode recovery capability featuring improved dV/dt and dI/dt handling.
• Enhanced gate, avalanche, and dynamic dV/dt ruggedness for robust operation.
• Fully characterized capacitance and Safe Operating Area (SOA) data.

Single FETs, MOSFETs Applications

• High efficiency synchronous rectification in switch-mode power supplies
• Uninterruptible power supply systems
• High speed power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRLPBF' against official documentation to confirm tape-and-reel packaging specifications. Confirm that the component meets RoHS compliance requirements as indicated in the datasheet. Ensure that the procurement source provides valid traceability for industrial market qualification standards. Cross-reference the manufacturer part number with the distributor catalog to ensure accurate identification before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a 100 V voltage rating. The low on-resistance minimizes conduction losses in synchronous rectification designs. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance. Consider the gate charge requirements when designing the driver circuitry for optimal switching speeds. Verify that the operating conditions remain within the defined safe operating area limits.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET and OptiMOS product families from Infineon Technologies. It represents a silicon-based N-channel enhancement mode MOSFET designed for industrial applications. The device is available in multiple package options, including TO-220AB and TO-262, providing flexibility for different mounting requirements. The technology focuses on improving ruggedness and reducing switching losses compared to standard MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for equivalent parts such as the IRFS4410ZTRLPBF. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure that any alternative component meets the same thermal and voltage ratings required by the design.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 300 mJ under thermally limited conditions starting at a junction temperature of 25°C.

How does the on-resistance vary with temperature?

The on-resistance increases with junction temperature. Normalized curves indicate that RDS(on) approximately doubles at 175°C compared to its value at 25°C.

Is this component suitable for surface mount applications?

Yes, the IRFS4410TRLPBF utilizes the D2PAK (TO-262) package which is designed for surface mount installation.