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IRFS4510PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 61A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFS4510PBF
- Description：MOSFET N-CH 100V 61A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13.9mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id：4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3180 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRFS4510PBF
Single FETs, MOSFETs Overview
The IRFS4510PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes TO-263 (D2PAK) surface-mount packaging and operates with a maximum drain-source voltage of 100 V. The device supports a continuous drain current of 78 A at 25°C and dissipates up to 190 W of power. Key electrical parameters include a maximum on-resistance of 13.5 mΩ at 10 V gate drive, a typical gate charge of 58 nC, and a junction temperature range extending to 175°C.
Single FETs, MOSFETs Feature Summary
- HexfET technology provides optimized switching performance and low conduction losses.
- Surface-mount D2PAK package facilitates automated assembly and thermal management.
- High avalanche energy rating ensures robustness against transient overvoltage events.
Single FETs, MOSFETs Applications
- Synchronous rectification in DC-DC converters
- Motor control circuits
- Power factor correction stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'PbF' indicates lead-free compliance when sourcing. Confirm the manufacturer datasheet revision matches the design requirements for thermal resistance values. Ensure the ordering part number corresponds exactly to the TO-263 package variant to avoid footprint mismatches during procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling in a compact surface-mount form factor. Evaluate the thermal impedance characteristics against the system's heat sinking capabilities. Compare the gate charge specifications with the driver circuit's output current capability to ensure adequate switching speeds without excessive drive losses.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It serves as a surface-mount alternative to through-hole variants like the IRFB4510, offering similar electrical performance in a D2PAK package suitable for PCB-mounted power supplies and industrial motor drives.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible replacements within the same voltage and current class should be verified against the official cross-reference list. Ensure any substitute maintains the same TO-263 package dimensions and thermal characteristics to fit existing board layouts.
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