IRFS9N60A

Single FETs, MOSFETs Overview

The IRFS9N60A is a Vishay Siliconix N-Channel Power MOSFET housed in a D2PAK (TO-263) package. It features a drain-source voltage rating of 600 V and a continuous drain current of 9.2 A at 25 °C case temperature. The maximum on-state resistance is 0.75 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge of 49 nC, turn-on delay time of 13 ns, rise time of 25 ns, turn-off delay time of 30 ns, and fall time of 22 ns. The device supports a single pulse avalanche energy of 290 mJ and operates within a junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

• Low gate charge for simple drive requirements
• Improved gate, avalanche and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage and current

Single FETs, MOSFETs Applications

• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
• Active clamped forward topologies
• Mains switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing, as it determines lead finish and packaging format. Options include Pb-free halogen-free variants (GE3), standard Pb-free versions (PbF), and tape-and-reel configurations (TRR,TRL). Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as the datasheet covers both compliant and non-compliant part variations.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring robust avalanche performance. Ensure thermal management accommodates the linear derating factor of 1.3 W/°C above 25 °C case temperature. Verify that the driving circuit can handle the specified gate charge and threshold voltage characteristics for reliable switching at the intended operating frequency.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix Power MOSFET family designed for high-voltage discrete semiconductor applications. It utilizes silicon technology and is manufactured under the Vishay brand. The product line includes various package options and termination finishes to suit different assembly and environmental requirements.

Single FETs, MOSFETs Replacement Considerations

SiHFS9N60A is an equivalent variant within the same series offering identical electrical specifications but with different material categorization and lead finish options.

Single FETs, MOSFETs FAQ

What is the peak diode recovery dv/dt rating?

The peak diode recovery dv/dt rating is 5.0 V/ns.

How does the on-resistance change with temperature?

The on-resistance increases with junction temperature, following a positive temperature coefficient as shown in the normalized on-resistance versus temperature graph.