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IRFSL38N20DPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 43A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFSL38N20DPBF
- Description：MOSFET N-CH 200V 43A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：54mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRFSL38N20DPBF
Single FETs, MOSFETs Overview
The IRFSL38N20DPbF is a HEXFET power MOSFET with a 200 V drain-source voltage rating and a maximum continuous drain current of 43 A at 25°C. It features a maximum on-resistance of 54 mΩ at 10 V gate drive and supports a peak pulsed drain current of 180 A. The device operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 300 W at 25°C case temperature.
Single FETs, MOSFETs Feature Summary
- Low gate-to-drain charge designed to reduce switching losses
- Fully characterized avalanche voltage and current capabilities
- Lead-free construction compliant with RoHS standards
Single FETs, MOSFETs Applications
- High frequency DC-DC converters
- Plasma display panels
Single FETs, MOSFETs Procurement Notes
Verify the specific package type matches the required circuit board layout, as this part number corresponds to the TO-262 form factor. Confirm that the industrial qualification level meets the operational environment requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under steady-state conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a 200 V N-channel MOSFET with moderate current handling is required. The TO-262 package offers a balance between surface mount convenience and robust thermal performance. Consider the avalanche energy ratings if the application involves inductive load switching or unclamped inductive scenarios.
Single FETs, MOSFETs Part Context
This model belongs to the IRFB/S/SL38N20D family of HEXFET power MOSFETs. It shares identical electrical characteristics with the IRFS38N20DPbF (D2-Pak) and IRFB38N20DPbF (TO-220AB), differing only in the physical mounting package configuration.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include IRFS38N20DPbF and IRFB38N20DPbF, which share the same electrical specifications but utilize D2-Pak and TO-220AB packages respectively.
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