IRFSL4310PBF

Single FETs, MOSFETs Overview

The IRFSL4310PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes the TO-262 (I2PAK) through-hole package and operates with a drain-source breakdown voltage of 100 V. The device supports a continuous drain current of 130 A at a case temperature of 25°C, with a maximum on-resistance of 7.0 mΩ. Key electrical parameters include a gate threshold voltage ranging from 2.0 V to 4.0 V, a total gate charge of 170 nC, and a forward transconductance of 160 S. It features an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Enhanced body diode dV/dt and dI/dt capability for improved switching performance
• Fully characterized capacitance and avalanche safe operating area
• Improved ruggedness regarding gate, avalanche, and dynamic dV/dt stress

Single FETs, MOSFETs Applications

• High efficiency synchronous rectification in switch mode power supplies
• Uninterruptible power supply systems
• High speed power switching circuits
• Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Infineon or authorized distributor channels. Confirm the specific TO-262 package marking matches the datasheet specifications. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under intended load conditions. Check for RoHS compliance documentation if required by local regulations.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with high current handling and low on-resistance is required for through-hole mounting. The TO-262 package provides superior thermal dissipation compared to surface mount alternatives. Consider the 100 V rating and 130 A current capacity relative to system peak loads and thermal constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It shares functional similarities with other variants like the IRFS4310 and IRFB4310, differing primarily in package type. The TO-262 configuration offers distinct mechanical and thermal characteristics suitable for specific board layout and heat sinking requirements.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRFS4310PBF and IRFB4310PBF. Verify pinout compatibility and ensure the replacement package fits the existing footprint. Thermal resistance and current derating curves must be reviewed to maintain equivalent performance levels.