IRFU1010ZPBF

$0.55

Description：MOSFET N-CH 55V 42A IPAK
Series：HEXFET®
Mfr：International Rectifier
Package：Tube

SKU:e08e26ebf1a5 Category: Single FETs, MOSFETs Brand: International Rectifier

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Product introduction

IRFU1010ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 55V 42A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU1010ZPBF

Description：MOSFET N-CH 55V 42A IPAK
Series：HEXFET®
Mfr：International Rectifier
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 42A, 10V
Vgs(th) (Max) @ Id：4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2840 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK (TO-251AA)
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU1010ZPBF

IRFU1010ZPBF

Single FETs, MOSFETs Overview

The IRFU1010ZPBF is a single N-channel power MOSFET from the HEXFET family, manufactured by International Rectifier. It utilizes advanced silicon gate technology to achieve extremely low on-resistance and fast switching speeds. The device features a maximum drain-source voltage of 55V and a continuous drain current of 91A. Its low thermal resistance facilitates efficient heat dissipation in surface-mount applications.

Single FETs, MOSFETs Feature Summary

Advanced silicon gate technology for low on-resistance
Fast switching speed with low thermal resistance
Lead-free finish and RoHS compliant construction

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Load switches
Power amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer date code and lot traceability upon receipt. Confirm that the component matches the specified DPAK package dimensions. Ensure storage conditions comply with moisture sensitivity level requirements to prevent damage during soldering processes.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel solution is required for high-current switching at 55V. The DPAK package offers a balance between current handling capability and board space efficiency. Consider the thermal performance relative to the specific PCB copper area available for heat sinking.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET power MOSFET series, known for high reliability and performance in power electronics. International Rectifier, now part of Infineon Technologies, developed these devices using proprietary silicon gate processes to optimize the trade-off between conduction losses and switching dynamics.