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IRFU9020PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 50V 9.9A TO251AA. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFU9020PBF
- Description：MOSFET P-CH 50V 9.9A TO251AA
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：280mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251AA
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for IRFU9020PBF
Single FETs, MOSFETs Overview
The Vishay Siliconix IRFU9020PBF is a P-Channel Power MOSFET housed in an IPAK (TO-251AA) through-hole package. It features a drain-source voltage of -50 V and a continuous drain current of -9.9 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.28 Ω at VGS = -10 V and ID = 5.7 A. Key dynamic parameters include a total gate charge of 14 nC maximum and a peak diode recovery dV/dt rating of 5.8 V/ns. Thermal performance includes a junction-to-case thermal resistance of 3.0 °C/W maximum, supporting up to 42 W power dissipation.
Single FETs, MOSFETs Feature Summary
- Straight lead option for through-hole mounting
- Repetitive avalanche ratings capability
- Dynamic dV/dt rating for robust switching
- Simple drive requirements with ease of paralleling
Single FETs, MOSFETs Applications
- Computers and peripherals
- Telecommunication equipment
- DC/DC converters
- Consumer products
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with RoHS and halogen-free material categorization standards. Confirm that the straight lead IPAK variant matches the intended PCB footprint and mechanical constraints. Ensure all technical specifications are validated for the specific application environment before final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a through-hole P-Channel MOSFET with moderate current handling is required. The IPAK package offers a balance between surface-mount efficiency and traditional through-hole assembly. Consider the repetitive avalanche energy rating if inductive load switching is present. Verify that the gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to the IRFU9020 series, which shares electrical characteristics with the IRFR9020 surface-mount variant but utilizes a different package style. The IPAK package provides a straight lead configuration suitable for applications where surface mounting is not preferred or feasible. It is part of Vishay's advanced line of power MOSFET transistors designed for efficient geometry and processing.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IRFU9024NPBF from Infineon Technologies and the NP20P06SLG-E1-AY from Renesas Electronics Corporation. Verify pinout compatibility and ensure that the substitute meets or exceeds the original voltage, current, and thermal specifications.
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