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IRFW530ATM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFW530ATM
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 55W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRFW530ATM
Single FETs, MOSFETs Overview
The IRFW530ATM is an N-channel Power MOSFET manufactured by Fairchild Semiconductor. It features a D2PAK-3 surface-mount package with the case connected to the drain. Key electrical parameters include a minimum drain-source breakdown voltage of 100 V, a maximum continuous drain current of 14 A, and a maximum on-resistance of 0.11 Ω. The device supports an avalanche energy rating of 261 mJ and operates at temperatures up to 175 °C.
Single FETs, MOSFETs Feature Summary
- Avalanche Rugged Technology for enhanced robustness
- Rugged Gate Oxide Technology
- Extended Safe Operating Area
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation as Fairchild Semiconductor or its successor entities. Confirm the specific suffix 'TM' corresponds to Avalanche Rugged Technology in official datasheets. Ensure the D2PAK-3 package matches the required PCB footprint and thermal management specifications for the target application.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 100 V rated N-channel MOSFET in a surface-mount configuration. Consider the 0.11 Ω on-resistance for conduction loss calculations. Verify that the 14 A current rating and 261 mJ avalanche energy capability meet the system's peak load and transient requirements.
Single FETs, MOSFETs Part Context
This part belongs to the Advanced Power MOSFET family from Fairchild Semiconductor. It shares functional similarities with other devices in the series but is distinguished by its specific avalanche ruggedness and D2PAK packaging. The 'TM' suffix indicates specific technology enhancements within this product line.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with IRFW530A TM for identical specifications. Verify compatibility with IRF530 variants if through-hole mounting is acceptable, noting differences in package type and potential parameter variations.
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