Single FETs, MOSFETs IRFZ24NLPBF product image

IRFZ24NLPBF

$0.60
  • Description:MOSFET N-CH 55V 17A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:dc73996397aa Category: Brand:

  
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IRFZ24NLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 17A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ24NLPBF

  • Description:MOSFET N-CH 55V 17A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:370 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRFZ24NLPBF

IRFZ24NLPBF

Single FETs, MOSFETs Overview

The IRFZ24NLPBF is a single N-channel power MOSFET from Infineon Technologies, manufactured using the HEXFET® planar technology. It features a maximum drain-source voltage of 55 V and a continuous drain current of 17 A at 25°C. The device exhibits a maximum on-resistance of 0.07 Ω at a gate-source voltage of 10 V. It is housed in a lead-free D2PAK-3 surface-mount package with the case connected to the drain terminal. The component supports an operating junction temperature up to 175°C and includes avalanche energy ratings for robust operation.

Single FETs, MOSFETs Feature Summary

  • Utilizes HEXFET® planar technology to minimize conduction losses and enhance system efficiency.
  • Features a low thermal resistance junction-to-case for effective heat dissipation in surface-mount designs.
  • Includes built-in avalanche capability rated for high reliability under transient conditions.

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • AC-DC power supplies
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LPBF' against official Infineon documentation to confirm lead-free status and RoHS compliance details. Ensure the ordering part number matches the exact package variant required for your PCB layout. Cross-reference the manufacturer's latest datasheet revision to confirm all electrical parameters remain unchanged.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a balance of low on-resistance and moderate current handling in a compact surface-mount form factor. Consider the 55V rating and 17A current capacity relative to your circuit's peak load requirements. Evaluate the thermal performance based on your board's copper area and ambient temperature constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET® Power MOSFET family, which offers a comprehensive range of N-channel devices designed for various power switching applications. The series is characterized by fast switching speeds and optimized RDS(on) values to support efficient power management solutions across industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Consult the official Infineon replacement guide for verified equivalents. Potential substitutes within the same voltage and current class include IRFZ24NPBF or IRFZ24NSTRLPBF, provided they meet the specific package and parameter requirements of your design.

IRFZ24NLPBFIRFZ24NLPBF
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