IRFZ34PBF-BE3

$1.87

Description：MOSFET N-CH 60V 30A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:708598753cea Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFZ34PBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 30A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ34PBF-BE3

Description：MOSFET N-CH 60V 30A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：50mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：88W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFZ34PBF-BE3

IRFZ34PBF-BE3

Single FETs, MOSFETs Overview

The IRFZ34PBF-BE3 is a Vishay Siliconix N-Channel Power MOSFET in a TO-220AB package. It features a 60 V drain-source voltage and a maximum on-resistance of 0.050 Ω at 10 V gate drive. The device supports a continuous drain current of 30 A at 25 °C case temperature, with a total gate charge of 46 nC. It operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Third-generation power MOSFET technology providing fast switching capabilities
Ruggedized device design with dynamic dV/dt rating
Optimized for ease of paralleling and simple drive requirements

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring moderate power dissipation levels
Switching circuits utilizing the integral reverse p-n junction body diode
Power management systems operating up to approximately 50 W

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required lead finish and halogen content. Confirm RoHS compliance status against the latest datasheet revision before procurement. Ensure thermal interface materials are compatible with the TO-220AB flange mount configuration for optimal heat transfer.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high-speed switching are prioritized for logic-level control applications. Evaluate the thermal resistance ratings to ensure adequate heat sinking for sustained operation. Consider the internal source and drain inductance values for high-frequency circuit layouts.

Single FETs, MOSFETs Part Context

This part belongs to the IRFZ series of third-generation power MOSFETs from Vishay Siliconix. The series is characterized by combining fast switching speeds with ruggedized designs and cost-effectiveness. The TO-220AB package provides universal acceptance across commercial and industrial sectors.