IRFZ44PBF-BE3

Single FETs, MOSFETs Overview

The IRFZ44PBF-BE3 is a Vishay Siliconix third-generation N-channel power MOSFET in a TO-220AB package. It features a 60 V drain-source voltage, 50 A continuous drain current at 25 °C case temperature, and a maximum on-resistance of 0.028 Ω at VGS = 10 V. The device supports an operating junction temperature up to 175 °C, with a total gate charge of 67 nC and a peak diode recovery dV/dt rating of 4.5 V/ns.

Single FETs, MOSFETs Feature Summary

• Third-generation power MOSFET technology providing fast switching capabilities and ruggedized device design.
• Low thermal resistance and low package cost within the universally preferred TO-220AB housing.
• High dynamic dV/dt rating for robust performance during rapid voltage transitions.
• Designed for ease of paralleling and simple drive requirements.

Single FETs, MOSFETs Applications

• Commercial-industrial applications requiring power dissipation levels up to approximately 50 W.
• General-purpose switching circuits utilizing standard logic-level gate drive voltages.
• Power conversion systems where low on-resistance and high efficiency are required.

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required compliance standards. The BE3 suffix indicates lead-free and halogen-free construction, whereas other suffixes may differ. Confirm RoHS compliance status directly against the manufacturer's documentation before procurement to ensure alignment with project specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with high current handling capability is needed. The TO-220AB package is suitable for through-hole mounting and heatsink attachment. Ensure the application operates within the specified 175 °C junction temperature limit and utilizes appropriate gate drive voltages to achieve the rated on-resistance.

Single FETs, MOSFETs Part Context

This part belongs to the IRFZ series of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to offer a combination of fast switching, low on-resistance, and cost-effectiveness. The TO-220AB package is widely accepted across the industry for its balance of thermal performance and mechanical simplicity.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay cross-reference documents for verified substitutes. Generic replacements must match the 60 V rating, N-channel configuration, and TO-220AB package form factor to ensure compatibility.