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Product Detailed Parameters
- Description：IGBT 600V 55A SUPER-220
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 27A
- Power - Max：200 W
- Switching Energy：80µJ (on), 320µJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：46ns/120ns
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-273AA
- Supplier Device Package：SUPER-220™ (TO-273AA)
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4BAC50W-S is a high-power Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and features a Super 220 package configuration designed for robust industrial applications. The device supports through-hole mounting and operates as a single-configured component. Key electrical specifications include a maximum collector-emitter voltage of 600V and a continuous collector current rating of 55A at 25°C. The unit exhibits a collector-emitter saturation voltage of 200W power dissipation capability, with a maximum junction temperature limit of 175°C.
Feature Summary
- High-power IGBT chip architecture optimized for demanding industrial environments
- Super 220 package design ensuring reliable thermal performance
- Through-hole mounting configuration for secure mechanical integration
Applications
- Industrial motor drives
- Power conversion systems
- Inverter circuits
Procurement Notes
Verify the specific manufacturer designation, as the component is associated with both International Rectifier and Infineon Technologies due to corporate acquisition history. Confirm the exact datasheet version to ensure alignment with electrical parameters and pinout definitions. Check RoHS compliance status carefully, as some listings indicate no RoHS information or obsolete lifecycle stages. Ensure the ordering suffix matches the required packaging and lead length specifications for your assembly process.
Selection Notes
Select this component when a 600V rated IGBT with 55A continuous current capacity is required in a Super 220 package. Consider its through-hole mounting style if PCB space allows and higher mechanical stability is needed compared to surface-mount alternatives. Evaluate the 200W power dissipation rating against your thermal management strategy. This part is suitable for applications prioritizing ruggedness and established reliability over miniaturization.
Part Context
The IRG4BAC50W-S belongs to the broader category of discrete semiconductor power devices produced by Infineon Technologies. It represents a legacy product line originally from International Rectifier, now integrated into Infineon's portfolio. The Super 220 package distinguishes it from standard TO-247 or D2PAK variants, offering different thermal and mechanical characteristics. It serves as a solution for medium-to-high power switching requirements in industrial sectors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Users should consult official Infineon replacement guides or distributor cross-reference tools for compatible alternatives.
