IRG4BC10KDPBF

Description：IGBT 600V 9A TO-220AB
Series：-

SKU:0770fb6b3f4d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 9A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：9:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：2.62V @ 15V, 5A
Power - Max：38 W
Switching Energy：250µJ (on), 140µJ (off)
Input Type：Standard
Gate Charge：19 nC
Td (on/off) @ 25°C：49ns/97ns
Test Condition：480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC10KDPBF

Overview

The IRG4BC10KDPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) with an integrated HEXFRED ultrafast soft-recovery diode, housed in a TO-220AB package. It features a collector-to-emitter voltage rating of 600V and a continuous collector current of 9.0A at 25°C case temperature. The device supports a short circuit withstand time of 10µs at 360V and 125°C junction temperature. Key electrical parameters include a typical saturation voltage of 2.39V at 5.0A and a maximum power dissipation of 38W at 25°C.

Feature Summary

Co-packaged with HEXFRED ultrafast, ultra-soft recovery anti-parallel diodes to minimize reverse recovery noise and switching losses.
Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
High short circuit rating optimized for motor control applications, supporting 10µs withstand time under specified conditions.

Applications

Motor control systems
Switch-mode power supplies
Welding equipment

Procurement Notes

Verify the component matches the exact Infineon part number IRG4BC10KDPBF. Confirm the datasheet corresponds to the Generation 4 IGBT specifications provided. Ensure the package type is TO-220AB and that the unit is lead-free compliant as indicated by the suffix. Cross-reference manufacturer documentation for any recent updates to thermal or electrical ratings.

Selection Notes

Select this component for designs requiring high reliability and tight parameter consistency in medium-power switching applications. The integrated HEXFRED diode simplifies bridge configurations by reducing EMI and switching losses. Consider the 10µs short circuit capability when designing protection circuits for motor drives. Evaluate thermal management requirements based on the 38W maximum power dissipation rating.

Part Context

This device belongs to the Infineon Generation 4 IGBT family, which emphasizes improved efficiency and reliability over earlier iterations. The co-packaging with HEXFRED diodes addresses common challenges in hard-switching topologies by optimizing the complementary diode's performance specifically for use with these IGBTs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material.

FAQ

What is the short circuit withstand time for the IRG4BC10KDPBF?

The device has a short circuit withstand time of 10µs, measured at VCC = 360V, TJ = 125°C, VGE = 15V, and RG = 100Ω.

How does the integrated diode improve performance?

The co-packaged HEXFRED ultrafast, ultra-soft recovery diode minimizes reverse recovery characteristics, which reduces noise, EMI, and switching losses in bridge configurations.