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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：140µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：25ns/630ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC10S is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 14 A at 25°C, with a pulsed current rating of 18 A. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 38 W of power. Key electrical parameters include a maximum saturation voltage of 1.8 V at 15 V gate drive and 8 A collector current, a gate charge of 15 nC, and switching times of 25 ns for turn-on and 630 ns for turn-off under specified test conditions.
Feature Summary
- Utilizes Generation 4 IGBT design technology for optimized performance in hard-switching applications.
- Provides high efficiency through tighter parameter distribution compared to previous generations.
- Features standard input type suitable for direct interface with common control logic.
Applications
- High-frequency motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity as the IRG4BC10S is officially obsolete and no longer in production. Confirm that any available units are genuine Infineon products rather than surplus or counterfeit items. Check for RoHS compliance status, as older stock may not meet current environmental regulations. Ensure proper handling procedures are followed due to the component's age and potential storage history.
Selection Notes
Select this component only if legacy compatibility is required for existing designs utilizing Generation 4 IGBTs. Evaluate alternative active parts like the IKA15N60TXKSA1 for new projects requiring current manufacturing support. Consider thermal management requirements given the 38 W power dissipation limit and TO-220AB package constraints. Verify that the 600V rating and 14A current capacity align with specific circuit load demands.
Part Context
The IRG4BC10S belongs to Infineon’s discrete IGBT portfolio, specifically designed for medium-power switching applications. It utilizes a TO-220AB through-hole package, facilitating easy mounting on heat sinks. As part of the Generation 4 series, it represents an evolution in silicon technology aimed at improving switching efficiency and reducing conduction losses in industrial power electronics.
Replacement Considerations
The IKA15N60TXKSA1 is documented as a similar replacement part available from Infineon Technologies. Verify pinout compatibility and electrical parameter alignment before substituting in existing circuits.
