IRG4BC15UD

IRG4BC15UD

$1.14
  • Description:IGBT 600V 14A TO-220AB
  • Series:-

SKU:1b3f4a3ddbac Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 14A TO-220AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):14 A
  • Current - Collector Pulsed (Icm):42 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 7.8A
  • Power - Max:49 W
  • Switching Energy:240µJ (on), 260µJ (off)
  • Input Type:Standard
  • Gate Charge:23 nC
  • Td (on/off) @ 25°C:17ns/160ns
  • Test Condition:480V, 7.8A, 75Ohm, 15V
  • Reverse Recovery Time (trr):28 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

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IRG4BC15UD

Overview

The IRG4BC15UD is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode, designed for high-frequency hard switching applications between 10 and 30 kHz. It features a 600V collector-to-emitter voltage rating and operates within a junction temperature range of -55°C to +150°C. The device utilizes the industry-standard TO-220AB package and incorporates lead-free construction compliant with RoHS directives.

Feature Summary

  • Co-packaged IGBT with ultra-soft-recovery antiparallel diode
  • Optimized for high frequencies from 10 to 30 kHz in hard switching
  • Positive-only gate drive requiring no negative bias
  • Compatible with high voltage Gate Driver ICs

Applications

  • Appliance applications
  • Industrial applications
  • Bridge circuit applications
  • Low EMI designs

Procurement Notes

Verify the specific ordering suffix against official documentation, as it determines the exact package type and compliance status. Confirm availability through authorized distributors or manufacturer channels. Ensure the component meets current environmental regulations such as RoHS requirements before procurement.

Selection Notes

Select this component for designs requiring single-package switching solutions for bridge circuits. Consider its positive-only gate drive capability to simplify driver design. Evaluate thermal management needs based on the specified junction-to-case resistance values for both the IGBT and diode sections.

Part Context

This part belongs to the UltraFast CoPack IGBT family from Infineon Technologies (formerly International Rectifier). It integrates an n-channel IGBT with an anti-parallel diode in a single TO-220AB package, providing a compact solution for power conversion systems.

Replacement Considerations

IRG4BC15UDPbF

FAQ

What is the maximum collector-to-emitter voltage?

The maximum collector-to-emitter voltage (VCES) is 600 V.

Does the device require a negative gate drive voltage?

No, the device features a high noise immune 'Positive Only' gate drive, making negative bias unnecessary.

What is the typical saturation voltage at 7.8A?

The typical collector-to-emitter saturation voltage (VCE(on)) is 2.02 V at VGE = 15V and IC = 7.8A.

IRG4BC15UDIRG4BC15UD
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