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The IRG4BC15UD is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode, designed for high-frequency hard switching applications between 10 and 30 kHz. It features a 600V collector-to-emitter voltage rating and operates within a junction temperature range of -55°C to +150°C. The device utilizes the industry-standard TO-220AB package and incorporates lead-free construction compliant with RoHS directives.
Verify the specific ordering suffix against official documentation, as it determines the exact package type and compliance status. Confirm availability through authorized distributors or manufacturer channels. Ensure the component meets current environmental regulations such as RoHS requirements before procurement.
Select this component for designs requiring single-package switching solutions for bridge circuits. Consider its positive-only gate drive capability to simplify driver design. Evaluate thermal management needs based on the specified junction-to-case resistance values for both the IGBT and diode sections.
This part belongs to the UltraFast CoPack IGBT family from Infineon Technologies (formerly International Rectifier). It integrates an n-channel IGBT with an anti-parallel diode in a single TO-220AB package, providing a compact solution for power conversion systems.
IRG4BC15UDPbF
The maximum collector-to-emitter voltage (VCES) is 600 V.
No, the device features a high noise immune 'Positive Only' gate drive, making negative bias unnecessary.
The typical collector-to-emitter saturation voltage (VCE(on)) is 2.02 V at VGE = 15V and IC = 7.8A.