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The IRG4BC20FD-SPBF is a Generation 4 IGBT from Infineon Technologies, housed in a TO-220AB package. It features a collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C. The device has a maximum power dissipation of 60 W and an on-state collector-emitter voltage of 2 V at 9 A. Switching characteristics include a turn-on time of 43 ns and a turn-off time of 240 ns under test conditions of 480 V, 9 A, and 50 Ω. The gate charge is 27 nC, with a reverse recovery time of 37 ns for the integrated diode.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as specific suffixes may vary. Check datasheet revisions for updated thermal and electrical parameters before finalizing procurement specifications.
Select this component for designs requiring robust performance in medium-power switching applications. Ensure adequate heatsinking to manage the 60 W power dissipation limit. Verify that the 600 V rating exceeds the circuit's peak voltage requirements with appropriate safety margins.
This part belongs to Infineon's IRG4BC series of Generation 4 IGBTs. These devices are engineered for improved efficiency and reliability in industrial power electronics. The TO-220AB package facilitates through-hole mounting for standard PCB layouts.
Consult official replacement guides for equivalent Generation 4 IGBTs with matching voltage and current ratings. Verify pin compatibility and thermal characteristics when substituting with other manufacturers' components.